ds30286 rev. b-2 1 of 3 MBRD1035CTL www.diodes.com diodes incorporated MBRD1035CTL 10a surface mount dual schottky barrier rectifier features single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. case: dpak molded plastic terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: see sheet 2 weight: 0.4 grams (approx.) ordering information: see below mechanical data b c d e g h j k l m a p 123 4 pin 1 pin 3 pin 4, bottomside heat s ink characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 35 v rms reverse voltage v r(rms) 25 v average rectified output current per leg (see figure 4) per package i o 5 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load per package (jedec method) i fsm 75 a typical thermal resistance junction to case bottom side per leg (note 1) r jc 2.43 c/w voltage rate of change @ v r = 35v, t j = 25c dv/dt 10,000 v/ s operating temperature range t j -55 to +125 c storage temperature range t stg -55 to +125 c guard ring die construction for transient protection low power loss, high efficiency high surge capability very low forward voltage drop for use in low voltage, high frequency inverters, or?ing, and polarity protection applications plastic material: ul flammability classification rating 94v-0 t c u d o r p w e n maximum ratings @ t a = 25 c unless otherwise specified dpak dim min max a 6.3 6.7 b 10 c 0.3 0.8 d 2.3 nominal e 2.1 2.5 g 0.4 0.6 h 1.2 1.6 j 5.3 5.7 k 0.5 nominal l 1.3 1.8 m 1.0 p 5.1 5.5 all dimensions in mm notes: 1. device mounted on pc board with 14mm 2 (.013mm thick) copper pad areas. ordering information (note 2) device packaging shipping MBRD1035CTL-t dpak 2500/tape & reel notes: 2. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
MBRD1035CTL = product type marking code = manufacturers code marking yww = date code marking y = last digit of year ex: 2 for 2002 ww = week code 01 to 52 yww mbrd 1035ctl ds30286 rev. b-2 2 of 3 MBRD1035CTL www.diodes.com notes: 1. device mounted on pc board with 14mm 2 (.013mm thick) copper pad areas. 2. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. short duration pulse test used to minimize self-heating effect. characteristic symbol min typ max unit test condition reverse breakdown voltage (note 3) v (br)r 35 v i r = 500 a forward voltage (note 3) v fm 0.47 0.41 0.56 0.55 v i f = 5a, t s = 25 c i f = 5a, t s = 100 c i f = 10a, t s = 25 c i f = 10a, t s = 100 c peak reverse current (note 3) i rm 0.04 2.0 30 200 5 ma ma a ma v r = 35v, t j = 25c v r = 35v, t j = 100c v r = 17.5v, t j = 25c v r = 17.5v, t j = 100c typical junction capacitance c j 340 pf f = 1.0mhz, v r = 4.0v dc electrical characteristics @ t a = 25 c unless otherwise specified t c u d o r p w e n 1 0.1 0.01 0.001 10 100 010 20 30 35 i , instantane o us reverse current (ma) r v , instantaneous reverse voltage (v) r fig. 2 typical reverse characteristics (per element) 5 15 25 t = +25 c j t = +125 c j t = +100 c j 0 100 200 300 400 600 500 i , instantane o us f o rward current (a) f v , instantaneous forward voltage (mv) f fig. 1 typical forward characteristics (per element) 10 1 0.1 0.01 0.001 0.0001 100 t = +25 c j t = 125 c j t=100 c j marking information
ds30286 rev. b-2 3 of 3 MBRD1035CTL www.diodes.com t c u d o r p w e n 0 0.5 1.0 1.5 2.5 2.0 3.0 3.5 4.0 0 1 3 2 4 5 6 7 8 9 10 p , average forward power dissipation (w) f(av) i , average forward current (a) f(av) fi g . 5 forward power dissipation ( per element ) t = 125c j 2 3 10 100 1000 0 15 10 25 30 35 20 40 c , junction capacitance (pf) j v , reverse voltage (v) r fig. 3 typical junction capacitance vs. reverse volta g e ( per element ) 5 f = 1mhz 0 1 2 4 3 5 6 7 -25 0 25 50 75 100 125 150 i , average f o rward current (a) f(av) t , ambient temperature (c) a fig. 4 dc forward current derating (per element) note 1 note 2 note 3 notes: 1. t a = t soldering point , r jc = 2.43 c/w, r ca = 0 c/w. 2. device mounted on getek substrate, 2?x2?, 2 oz. copper, double-sided, cathode pad dimensions 0.75? x 1.0?, anode pad dimensions 0.25? x 1.0?. r ja in range of 15-30c/w. 3. device mounted on fr-4 substrate, 2?x2?, 2 oz. copper, single-sided, pad layout as per diodes inc. suggest ed pad layout document ap02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. r ja in range of 60-75c/w.
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